Modelling of RF High Power Bipolar Transistors
Koen Mouthaan
SEM photo of BLV 910 RF power transistor die after thermal runaway.
Preface, Summary and Overview of Chapters
Preface to the thesis
Summary of the thesis
Chapter 1: Introduction
Chapter 2: Statement of the problem
Chapter 3: Electrical Modelling of bondwires, matching capacitors and packages
Chapter 4: Electro-thermal modelling and measurement
Chapter 5: Modelling and Measurement of RF high power bipolar transistors
Chapter 6: Conclusions and recommendations
Information
Title
Modelling of RF High Power Bipolar Transistors
Author
Koen Mouthaan
University
Delft University of Technology, Delft, Netherlands
ISBN
90-407-2145-9
Year
2001
Pages
212
Downloadable publications
Thermal resistance modelling of RF high power bipolar transistors
Essderc - 27th European Solid-State Device Research Conference - Stuttgart, Germany - 1997.
Microwave modelling and measurement of the self- and mutual inductance of coupled bondwires
Bipolar Circuits and Technology Meeting - Minneapolis, USA - 1997.
Microwave modelling and measurement of prematch circuitry for RF power transistors
European Microwave Conference - Amsterdam, The Netherlands - 1998.
Modelling and measurement of electro-thermal interaction in RF bipolar power transistors
IEEE Silicon Monolithic Integrated Circuits in RF Systems Meeting - Ann Arbor, USA - 1998
Keywords: RF power transistors, Philips, Ericsson, Motorola, modelling, microwave, RF, Agilent ADS, Agilent MDS, bondwires, electromagnetic, thermal analysis, CAD, Computer Aided Design, Bipolar, LDMOS, MOSFET, package, package modelling.
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Last updated: Dec 15, 2004.