Modelling of RF High Power Bipolar Transistors
Koen Mouthaan
PhD Thesis
Preface
This thesis describes work performed in the Microwave Components Group at
the Delft University of Technology from 1993 to 1999. The subject of the
work is the modelling and measurement of RF high power bipolar transistors.
In 1993 extensive discussions with the discrete semiconductor group
of Philips Semiconductors led to the definition of a PhD research
project in the area of modelling and measurement of RF power transistors.
Philips Semiconductors provided the start up funding for the project and
additional funding for measurement gear. The Dutch Technology Foundation
(STW) funded the project starting in November 1993. Hewlett-Packard (now
Agilent Technologies) provided significant financial support as well.
Koen Mouthaan joined the project in August 1993 after performing a
feasibility study at Philips Semiconductors. His work focussed on the
compact electrical and thermal modelling of RF power transistors.
Roberto Tinti, a second PhD student joined the team in January 1995.
His main focus has been on the isothermal and non-isothermal
characterisation of RF power transistors.
The combined efforts of Mouthaan and Tinti resulted in an experimentally
verified, accurate, predictive electro-thermal model for RF bipolar power
transistors.
In chapter 5 the final results of this combined work are
presented in brief. A more detailed discussion of these results and on the
characterisation of power transistors will be given in Roberto Tinti's
thesis, which is to appear in the near future.
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